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| UTC 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta = 25) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25 TC=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC TJ Tstg RATINGS -230 -230 -5 -1 -0.1 2.0 20 150 -55 ~ 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base -Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL V(BR) CEO ICBO IEBO hFE VCE (sat) VBE fT Cob TEST CONDITIONS IC= -10mA, IB=0 VCB = -230V, IE=0 VEB= -5V, IC=0 VCE= -5V, IC= -100mA IC= -500mA, IB= -50mA VCE= -5V, IC= -500mA VCE= -10V, IC= -100mA VCB= -10V, IC=0, f=1MHz MIN -230 TYP MAX -1.0 -1.0 320 -1.5 -1.0 UNIT V A A V V MHz pF 100 70 30 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R219-002,A UTC 2SA1837 fT - IC 500 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS IC - VBE -1.0 TRANSITION FREQUENCY, fT (MHz) COLLECTOR CURRENT, IC (A) COMMON EMITTER 300 VCE= -10V TC =25 -0.8 COMMON EMITTER VCE= -5V 100 -0.6 TC =100 25 -25 50 30 -0.4 -0.2 10 0 -5 -10 -30 -100 -300 -1000 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 COLLECTOR CURRENT, IC (mA) BASE-EMITTER VOLTAGE, VBE (V) hFE - IC 1000 500 300 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE (sat) (V) DC CURRENT GAIN, hFE COMMON EMITTER VCE= -5V TC =100 VCE(sat) - IC COMMON EMITTER -1 IC/IB= 10 -0.5 -0.3 -0.1 -0.05 -0.03 -3 100 50 30 25 -25 TC =100 10 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.01 -0.003 -0.01 25 -25 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT, IC (A) IC - VCE -1.0 -20 -10 -3 -5 SAFE OPERATING AREA -8 -0.8 COLLECTOR CURRENT, IC (A) COLLECTOR CURRENT, IC (A) -1 -0.5 -0.3 IC MAX. (PULSED) IC MAX. (CONTINUOUS) 1ms 10ms 100ms -6 -0.6 -4 -0.4 IB = -2mA -0.2 COMMON EMITTER TC =25 -2 -4 -6 -8 -10 DC OPERATION -0.1 -0.05 -0.03 0 0 -0.01 SINGLE NONREPETITIVE PULSE TC =25 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE, V CE (V) COLLECTOR-EMITTER VOLTAGE, VCE (V) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R219-002,A UTC 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R219-002,A |
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